CERN Accelerating science

CERN Document Server 2,040 záznamov nájdených  1 - 10ďalšíkoniec  skoč na záznam: Hľadanie trvalo 0.74 sekúnd. 
1.
Proposal for further work on radiation hardening of silicon detectors : financial addendum to the proposal P62
CERN-LHCC-96-027 ; DRDC-P-62-Add-1 ; LHCC-P-62-Add-1.
- 1996. - 1 p.
Fulltext
2.
Proposal for further work on radiation hardening of silicon detectors / Lemeilleur, F (Spokesperson) ; Lindstroem G (Spokesperson) ; Watts, S (Spokesperson)
CERN-LHCC-96-023 ; DRDC-P-62 ; LHCC-P-62.
- 1996. - 21 p.
Letter - Fulltext
3.
Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. [...]
2002
In : 6th European Conference On Radiation And Its Effects On Components And Systems, Grenoble, France, 10 - 13 Sep 2001, pp.91-97
4.
3rd ROSE Workshop on Radiation Hardening of Silicon Detectors - Radiation Hardening of Silicon Detectors   12 - 14 Feb 1998  - DESY, Hamburg, Germany  / Lemeilleur, F (ed.)
Hamburg : DESY, 1998 - Transparencies. DESY-PROC-98-02 CERN library copies
5.
5th Rose Workshop on Radiation Hardening of Silicon Detectors - Radiation Hardening of Silicon Detectors   16 - 17 Mar 2000  - CERN, Geneva, Switzerland  .-
Geneva : CERN, 2000 - Transparencies. CERN-LEB-2000-005 Transparencies - CERN library copies
6.
4th Rose workshop on Radiation Hardening of Silicon Detectors - Radiation Hardening of Silicon Detectors   2 - 4 Dec 1998  - CERN, Geneva, Switzerland  .-
Geneva : CERN, 1998 - Transparencies. CERN-LEB-98-11 CERN library copies
7.
Radiation resistance of the ATLAS pixel sensors / D'Auria, S D
This work describes the R and D work on radiation resistant silicon sensors for the ATLAS pixel detector: the technological choices and the design will be illustrated. Some sensor prototypes have been characterised and tested with unirradiated front-end electronics before and after high energy proton irradiation, showing that we can achieve the required radiation resistance to fluences of 1*10/sup 15/ cm/sup -2/ using n/sup +/ on n sensors with the p-spray isolation technology. [...]
1999 - Published in : Nucl. Phys. B, Proc. Suppl. 78 (1999) 639-44
8.
Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A J D
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. [...]
2002 - Published in : IEEE Trans. Nucl. Sci. 49 (2002) 1377-82
9.
Addendum to the proposal to measure channeling radiation in a silicon crystal / Bak, J ; Meyer, P ; Marsh, B (et al.)
CERN-SPSC-81-2 ; SPSC-P-141-Add-1.
- 1981. - 2 p.
Fulltext
10.
A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors / Petasecca, Marco (Perugia U. ; INFN, Perugia) ; Moscatelli, Francesco (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, Daniele (Perugia U. ; INFN, Perugia) ; Pignatel, Giorgio Umberto (Perugia U. ; INFN, Perugia) ; Scarpello, Carlo (Perugia U.) ; Caprai, Giovanni (Perugia U.)
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. [...]
2005 - 4 p. - Published in : 10.1109/NSSMIC.2005.1596601
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1490-1493

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