CERN Accelerating science

RD50 Conference Proceedings

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2018-08-25
06:58
Recent developments of the CERN RD50 collaboration / Menichelli, David (U. Florence (main) ; INFN, Florence) /CERN RD50
The objective of the RD50 collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of the possible upgrade of the large hadron collider (LHC) at CERN. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) the progresses in the characterization of lattice defects responsible for carrier trapping; (ii) charge collection efficiency of n-in-p microstrip detectors, irradiated with neutrons, as measured with different readout electronics; (iii) charge collection efficiency of single-type column 3D detectors, after proton and neutron irradiations, including position-sensitive measurement; (iv) simulations of irradiated double-sided and full-3D detectors, as well as the state of their production process..
2008 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 596 (2008) 48-52

In : 8th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 27 - 29 Jun 2007, pp.48-52

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2018-08-25
06:58
Development of semiconductor detectors for very harsh radiation environments in high energy physics applications / Casse, G (Liverpool U.) /RD50
The Large Hadron Collider (LHC) at CERN has been designed to achieve the unprecedented luminosity of $10^{34} \rm{cm}^{-2} s^{-1}$. As a consequence, the silicon detectors close to the interaction region will receive severe doses of hadron irradiation. [...]
2004 - 15 p. - Published in : , pp. 129-143
In : 42nd INFN ELOISATRON Project Workshop : Innovative Detectors for Supercolliders "Ettore Majorana", Erice, Italy, 28 Sep - 4 Oct 2003, pp.129-143

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2018-08-25
06:58
Performance of irradiated bulk SiC detectors / Cunningham, W (Glasgow U.) ; Melone, J (Glasgow U.) ; Horn, M (Glasgow U.) ; Kazukauskas, V (Vilnius U.) ; Roy, P (Glasgow U.) ; Doherty, F (Glasgow U.) ; Glaser, M (CERN) ; Vaitkus, J (Vilnius U.) ; Rahman, M (Glasgow U.) /CERN RD50
Silicon carbide (SiC) is a wide bandgap material with many excellent properties for future use as a detector medium. We present here the performance of irradiated planar detector diodes made from 100-$\mu \rm{m}$-thick semi-insulating SiC from Cree. [...]
2003 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 509 (2003) 127-131

In : 4th International Workshop on Radiation Imaging Detectors, Amsterdam, The Netherlands, 8 - 12 Sep 2002, pp.127-131

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2018-08-24
06:19
Measurements and simulations of charge collection efficiency of p$^+$/n junction SiC detectors / Moscatelli, F (IMM, Bologna ; U. Perugia (main) ; INFN, Perugia) ; Scorzoni, A (U. Perugia (main) ; INFN, Perugia ; IMM, Bologna) ; Poggi, A (Perugia U.) ; Bruzzi, M (Florence U.) ; Lagomarsino, S (Florence U.) ; Mersi, S (Florence U.) ; Sciortino, Silvio (Florence U.) ; Nipoti, R (IMM, Bologna)
Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments (RD50, LHCC 2002–2003, 15 February 2002, CERN, Ginevra). In this work p$^+$/n SiC diodes realised on a medium-doped ($1 \times 10^{15} \rm{cm}^{−3}$), 40 $\mu \rm{m}$ thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under $\beta$ particle radiation from a $^{90}$Sr source are presented. [...]
2005 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 546 (2005) 218-221

In : 6th International Workshop on Radiation Imaging Detectors, Glasgow, UK, 25-29 Jul 2004, pp.218-221

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2018-08-24
06:19
Measurement of trapping time constants in proton-irradiated silicon pad detectors / Krasel, O (Dortmund U.) ; Gossling, C (Dortmund U.) ; Klingenberg, R (Dortmund U.) ; Rajek, S (Dortmund U.) ; Wunstorf, R (Dortmund U.)
Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between $2 \cdot 10^{13} \ n_{\rm{eq}}/\rm{cm}^2$ and $9 \cdot 10^{14} \ n_{\rm{eq}}/\rm{cm}^2$. The transient current technique was used to measure the trapping probability for holes and electrons. [...]
2004 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 3055-3062
In : 50th IEEE 2003 Nuclear Science Symposium, Medical Imaging Conference, 13th International Workshop on Room Temperature Semiconductor Detectors and Symposium on Nuclear Power Systems, Portland, OR, USA, 19 - 25 Oct 2003, pp.3055-3062

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2018-08-24
06:19
Lithium ion irradiation effects on epitaxial silicon detectors / Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772

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2018-08-24
06:19
Radiation hardness of different silicon materials after high-energy electron irradiation / Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116

In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116

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2018-08-24
06:19
Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection / Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Kramberger, G (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana ; Ljubljana U.) ; Zavrtanik, M (Ljubljana U.)
Holes were continuously injected into irradiated diodes by light illumination of the n$^+$-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. [...]
2004 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 343-345

In : 9th Pisa Meeting on Advanced Detectors, La Biodola, Italy, 25 - 31 May 2003, pp.343-345

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2018-08-24
06:19
First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon / Casse, G (Liverpool U.) ; Allport, P P (Liverpool U.) ; Martí i Garcia, S (CSIC, Catalunya) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Turner, P R (Liverpool U.)
Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. [...]
2004 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 340-342

In : 9th Pisa Meeting on Advanced Detectors, La Biodola, Italy, 25 - 31 May 2003, pp.340-342

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2018-08-23
11:31
Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures / Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Korshunov, F P (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Abrosimov, N V (Unlisted, DE)
New findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. [...]
2015 - 4 p. - Published in : AIP Conf. Proc. 1583 (2015) 123-126

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