2022-08-10 08:45 |
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2022-08-10 08:45 |
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2021-01-22 04:13 |
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2020-12-16 06:02 |
LGAD and 3D as Timing Detectors
/ Ugobono, Sofia Otero (Barcelona, Inst. Microelectron.)
/RD50 Collaboration
In view of the High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC), radiation tolerant silicon sensors are being developed in the framework of ATLAS, CMS, RD50 and other sensor R\&D; projects. The HL-LHC beam parameters and hardware configuration should enable the collider to reach a peak instantaneous luminosity of $5\times10^{34}\textrm{ cm}^{-2}\textrm{s}^{-1}$, and an integrated luminosity of 250 fb$^{-1}/\textrm{year}$ with the goal of 3000 fb$^{-1}$ after about 12 years of operation. [...]
SISSA, 2019 - 13 p.
- Published in : PoS Vertex2019 (2019) 035
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.035
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2020-12-16 06:02 |
Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities
/ Ott, Jennifer (Helsinki U. ; Helsinki U. of Tech.)
/RD50 Collaboration
At the LHC Phase-II Upgrade foreseen for 2027, the particle densities and radiation levels will increase by roughly an order of magnitude compared to the present LHC conditions, and the silicon-based inner tracking systems have to be able to withstand fluences of up to 2$\times$ 16$^{16}$ n$_{eq}$/cm$^{2}$. To mitigate the increased pileup at the HL-LHC, dedicated timing detectors are employed.Within the CERN RD50 Collaboration, a large RD program has been underway for more than a decade across experimental boundaries to develop silicon sensors with sufficient radiation tolerance for HL-LHC tracking and timing detectors. [...]
SISSA, 2020 - 14 p.
- Published in : PoS Vertex2019 (2020) 028
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.028
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2020-07-28 06:23 |
Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
/ Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
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2020-07-25 06:39 |
Development of RD50-MPW2: a high-speed monolithic HV-CMOS prototype chip within the CERN-RD50 collaboration
/ Zhang, Chenfan (Liverpool U. ; Fond. Bruno Kessler, Trento) ; Casse, Gianluigi (Liverpool U. ; Fond. Bruno Kessler, Trento) ; Massari, Nicola (Fond. Bruno Kessler, Trento) ; Vilella, Eva (U. Liverpool (main)) ; Vossebeld, Joost (U. Liverpool (main))
The CERN-RD50 collaboration has ongoing research to further develop monolithic High Voltage-CMOS (HV-CMOS) sensors in a 150 nm process for future particle physics experiments. As a part of this research programme, a test chip (RD50-MPW2) that implements new methodologies for low leakage current and fast and low-noise readout circuitry has been designed and submitted for fabrication. [...]
SISSA, 2020 - 5 p.
- Published in : PoS TWEPP2019 (2020) 045
Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.045
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2020-03-19 07:03 |
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2019-10-30 04:20 |
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2019-10-29 06:54 |
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